Manufacturer Part Number
MRF5812GR1
Manufacturer
Microsemi
Introduction
Discrete semiconductor product
Transistor Bipolar (BJT) RF
Product Features and Performance
25W maximum power
15V maximum collector-emitter breakdown voltage
200mA maximum collector current
NPN transistor type
50 minimum DC current gain (hFE) at 50mA, 5V
5GHz transition frequency
13dB to 15.5dB gain
2dB to 3dB noise figure at 500MHz
Surface mount packaging
Product Advantages
High-performance RF transistor
Suitable for a variety of RF applications
Compact surface mount package
Key Technical Parameters
Power rating: 1.25W
Collector-emitter breakdown voltage: 15V
Collector current: 200mA
Transistor type: NPN
DC current gain (hFE): 50 minimum at 50mA, 5V
Transition frequency: 5GHz
Gain: 13dB to 15.5dB
Noise figure: 2dB to 3dB at 500MHz
Quality and Safety Features
Reliable and robust design
Meets industry safety standards
Compatibility
Suitable for a wide range of RF and wireless applications
Application Areas
Radio frequency (RF) amplifiers
Wireless communication systems
Industrial and commercial electronics
Product Lifecycle
Current product, no discontinuation expected
Replacement and upgrade options available
Key Reasons to Choose This Product
High-performance RF characteristics
Compact surface mount package
Reliable and robust design
Suitable for a variety of RF applications