Manufacturer Part Number
APTGT75DA170D1G
Manufacturer
Microsemi
Introduction
This is a high-power IGBT (Insulated Gate Bipolar Transistor) module from Microsemi, designed for a variety of industrial and power electronics applications.
Product Features and Performance
High power handling capability up to 520W
Trench field stop IGBT technology
Standard input configuration
Single-chip design
Input capacitance (Cies) of 6.5nF at 25V
Collector-emitter breakdown voltage of 1700V
Collector current (Ic) up to 120A
Low collector-emitter saturation voltage (Vce(on)) of 2.4V at 15V, 75A
Collector cutoff current (Ic) limited to 5mA
Product Advantages
Robust and reliable performance
Efficient power handling
Compact and space-saving design
Suitable for various power electronics applications
Key Technical Parameters
Power Rating: 520W
IGBT Type: Trench Field Stop
Input Configuration: Standard
Input Capacitance (Cies): 6.5nF @ 25V
Collector-Emitter Breakdown Voltage: 1700V
Collector Current (Ic): 120A
Collector-Emitter Saturation Voltage (Vce(on)): 2.4V @ 15V, 75A
Collector Cutoff Current (Ic): 5mA
Quality and Safety Features
Microsemi's high-quality manufacturing standards
Overcurrent and overvoltage protection
Compatibility
This IGBT module is designed for use in a variety of industrial and power electronics applications, such as motor drives, power inverters, and power supplies.
Application Areas
Industrial motor drives
Power inverters
Power supplies
Other high-power electronics applications
Product Lifecycle
This IGBT module is an active product in Microsemi's portfolio. Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
High power handling capability up to 520W
Robust and reliable trench field stop IGBT technology
Efficient power management with low Vce(on) and Ic(off)
Compact and space-saving design
Suitable for a wide range of industrial and power electronics applications
Backed by Microsemi's high-quality manufacturing standards