Manufacturer Part Number
APTGT75A120D1G
Manufacturer
Microsemi
Introduction
Discrete Semiconductor Product
Transistors IGBTs Modules
Product Features and Performance
RoHS Compliant
Manufacturer's Packaging: D1
Package / Case: D1
Supplier Device Package: D1
Package: Bulk
Power Max: 357 W
IGBT Type: Trench Field Stop
Input: Standard
Configuration: Half Bridge
Input Capacitance (Cies) @ Vce: 5.345 nF @ 25 V
Voltage Collector Emitter Breakdown (Max): 1200 V
NTC Thermistor: No
Current Collector (Ic) (Max): 110 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Current Collector Cutoff (Max): 4 mA
Mounting Type: Chassis Mount
Product Advantages
Trench Field Stop IGBT Design
High Power Density
Robust Packaging
Key Technical Parameters
Power Rating: 357 W
Voltage Rating: 1200 V
Current Rating: 110 A
Quality and Safety Features
RoHS Compliant
Robust Packaging
Compatibility
Suitable for a variety of industrial and power electronics applications
Application Areas
Industrial Drives
Power Supplies
UPS Systems
Welding Equipment
Renewable Energy Systems
Product Lifecycle
Currently available
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
High power density and performance
Robust trench field stop IGBT design
Reliable and safe operation
Compatibility with a wide range of applications
