Manufacturer Part Number
APT60M80JVR
Manufacturer
Microsemi
Introduction
This product is a high-performance, N-channel MOSFET transistor with a power handling capacity of up to 568W.
Product Features and Performance
High voltage rating of 600V
Low on-resistance of 80mOhm @ 500mA, 10V
Capable of handling continuous drain current of 55A at 25°C
Wide operating temperature range of -55°C to 150°C
High input capacitance of 14500pF @ 25V
Product Advantages
Excellent power handling and efficiency
Robust and reliable performance
Suitable for high-voltage, high-current applications
Wide temperature range for versatile usage
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs) (Max): ±30V
On-Resistance (Rds On) (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V
Continuous Drain Current (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
Power Dissipation (Max): 568W (Tc)
Quality and Safety Features
MOSFET technology for high reliability and performance
Chassis mount packaging for secure installation
Suitable for high-power, high-voltage applications
Compatibility
This MOSFET transistor is compatible with a wide range of electronic circuits and systems that require high-voltage, high-current switching capabilities.
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control systems
Product Lifecycle
This product is currently in production and not nearing discontinuation. Replacement or upgrade options may be available in the future as technology evolves.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Excellent efficiency and low on-resistance
Wide operating temperature range
Robust and reliable performance
Suitable for a variety of high-power applications