Manufacturer Part Number
APT60M75JVFR
Manufacturer
Microsemi
Introduction
High-performance N-channel power MOSFET transistor with low on-resistance and high-voltage rating
Product Features and Performance
600V drain-to-source voltage rating
75mΩ maximum on-resistance
62A continuous drain current at 25°C
700W maximum power dissipation
Fast switching speed and low gate charge
Suitable for high-voltage, high-current switching applications
Product Advantages
Excellent thermal performance and power handling
Reliable and durable design
Efficient power conversion and low power losses
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 75mΩ @ 31A, 10V
Continuous Drain Current (Id): 62A (at 25°C)
Input Capacitance (Ciss): 19800pF @ 25V
Power Dissipation (Pc): 700W (at Tc)
Operating Temperature: -55°C to 150°C
Quality and Safety Features
Robust metal-oxide-semiconductor field-effect transistor (MOSFET) technology
Hermetically sealed ISOTOP package for enhanced reliability
Complies with relevant safety and quality standards
Compatibility
Compatible with a wide range of high-voltage, high-current switching applications, such as:
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control systems
Application Areas
High-voltage, high-current switching
Power conversion and control
Industrial and commercial applications
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgraded models may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent power handling and thermal performance
Low on-resistance for efficient power conversion
Fast switching speed and low gate charge for high-frequency operation
Reliable and durable ISOTOP package design
Wide operating temperature range for versatile applications
Compatibility with a broad range of high-voltage, high-current switching systems