MT29F2G08ABAGAH4-AAT:G - Micron

Manufacturer Part Number

MT29F2G08ABAGAH4-AAT:G

Manufacturer

Micron Technology

Introduction

The MT29F2G08ABAGAH4-AAT:G is a high-density, high-performance NAND flash memory device from Micron Technology. This 2Gbit NAND flash memory offers a parallel interface and is designed to meet the demanding requirements of automotive and industrial applications.

Product Features and Performance

2Gbit NAND flash memory

256M x 8 memory organization

Parallel interface

20ns write cycle time (word, page)

20ns access time

7V to 3.6V operating voltage

Operating temperature range of -40°C to +105°C

AEC-Q100 qualified for automotive applications

Product Advantages

High-density storage capacity

Fast read and write performance

Wide operating temperature range

Automotive-grade quality and reliability

Key Reasons to Choose This Product

Designed for demanding automotive and industrial applications

Excellent performance and power efficiency

Proven reliability and quality from a leading memory manufacturer

Comprehensive technical support and product lifecycle management

Quality and Safety Features

AEC-Q100 qualified

Robust error correction and data integrity mechanisms

Rigorous testing and screening processes

Compatibility

The MT29F2G08ABAGAH4-AAT:G is a drop-in replacement for other NAND flash memory devices with similar specifications and pinouts.

Application Areas

Automotive electronics (e.g., infotainment systems, advanced driver assistance systems)

Industrial control and automation systems

Embedded systems and IoT devices

Product Lifecycle

The MT29F2G08ABAGAH4-AAT:G is an active product in our website's sales team's portfolio. There are no immediate plans for discontinuation, and our website's sales team continues to offer this and similar NAND flash memory products to meet the needs of the automotive and industrial markets. Customers are encouraged to contact our website's sales team for the latest product information and availability.