Manufacturer Part Number
MT29F2G08ABAFAH4-S:F
Manufacturer
Micron Technology
Introduction
Micron Technology's MT29F2G08ABAFAH4-S:F is a Non-Volatile FLASH memory device optimized for high data storage capacity and performance.
Product Features and Performance
Non-Volatile FLASH memory
2 Gbit memory size
256M x 8 memory organization
Parallel memory interface
FLASH - NAND technology
Product Advantages
High storage capacity for memory-intensive applications
Durable solid-state construction
No need for a battery to maintain data integrity
Key Technical Parameters
Memory Type: Non-Volatile
Memory Format: FLASH
Memory Size: 2 Gbit
Voltage - Supply: 2.7V to 3.6V
Operating Temperature: 0°C to 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)
Quality and Safety Features
Operates reliably within the standard temperature range of 0°C to 70°C
Constructed to meet typical safety standards for FLASH memory
Compatibility
Compatible with applications requiring a Parallel interface
Useable for devices able to accommodate 63-VFBGA mounting format
Application Areas
Can be used in various electronic devices that require high-density, non-volatile memory storage
Product Lifecycle
Obsolete (Consider verifying for the latest product lifecycle status)
Potential need to look for replacements or upgrades due to obsolescence
Several Key Reasons to Choose This Product
High density, 2 Gbit storage capacity accommodates large amounts of data
Stable data storage with Non-Volatile technology
Micron Technology's reputation for quality and reliability
Robust operating temperature range suitable for diverse applications
Parallel interface suitable for high-speed operations
MT29F2G08ABAGAMicron Technology
MT29F2G08ABAEAWPIT:EMICON