TP5335K1-G - Microchip Technology

Manufacturer Part Number

TP5335K1-G

Manufacturer

Microchip Technology

Introduction

High-performance P-channel MOSFET transistor

Suitable for various power management and switching applications

Product Features and Performance

Wide operating temperature range of -55°C to 150°C

High drain-to-source voltage of 350V

Low on-resistance (Rds(on)) of 30Ω at 200mA, 10V

Input capacitance (Ciss) of 110pF at 25V

Continuous drain current (Id) of 85mA at 25°C

Product Advantages

Excellent power efficiency due to low Rds(on)

Robust design for reliable operation in harsh environments

Compact SOT-23 package for space-constrained applications

Key Technical Parameters

Drain-to-source voltage (Vdss): 350V

Gate-to-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 30Ω at 200mA, 10V

Input capacitance (Ciss): 110pF at 25V

Continuous drain current (Id): 85mA at 25°C

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Reliable operation within the specified temperature range

Compatibility

Suitable for a wide range of power management and switching applications

Application Areas

Power supplies

Motor control

Battery charging circuits

Lighting control

General power switching

Product Lifecycle

Current production model, no discontinuation planned

Replacement or upgrade options available from Microchip Technology

Several Key Reasons to Choose This Product

Excellent power efficiency and performance

Robust design for reliability in harsh environments

Compact package for space-constrained applications

Wide operating temperature range for versatility

RoHS3 compliance for environmental responsibility

Availability of replacement and upgrade options