TP5322K1-G - Microchip Technology

Manufacturer Part Number

TP5322K1-G

Manufacturer

Microchip Technology

Introduction

The TP5322K1-G is a discrete P-channel MOSFET transistor manufactured by Microchip Technology.

Product Features and Performance

Drain to Source Voltage (Vdss): 220V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V

Current Continuous Drain (Id) @ 25°C: 120mA (Tj)

Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V

Power Dissipation (Max): 360mW (Ta)

Vgs(th) (Max) @ Id: 2.4V @ 1mA

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Product Advantages

High drain-to-source voltage rating

Low on-resistance

Compact surface mount package

Key Technical Parameters

MOSFET technology

P-channel FET type

TO-236AB (SOT23) package

Surface mount mounting

Quality and Safety Features

RoHS3 compliant

Operating temperature range: -55°C to 150°C

Compatibility

Compatible with a wide range of electronic circuits and applications that require a high-voltage, low on-resistance P-channel MOSFET.

Application Areas

Power management circuits

Switching applications

Amplifier circuits

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgrade options may be available from Microchip Technology or other manufacturers.

Key Reasons to Choose This Product

Excellent high-voltage and low on-resistance performance

Compact and easy-to-use surface mount package

Reliable and RoHS-compliant design

Suitable for a wide range of electronic applications