Manufacturer Part Number
TP2510N8-G
Manufacturer
Microchip Technology
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
RoHS3 Compliant
TO-243AA (SOT-89) Package
Operating Temperature: -55°C to 150°C
Drain to Source Voltage (Vdss): 100V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.5Ω @ 750mA, 10V
MOSFET Technology
Continuous Drain Current (Id): 480mA @ 25°C
Input Capacitance (Ciss): 125pF @ 25V
Power Dissipation: 1.6W @ 25°C
P-Channel FET
Gate Threshold Voltage (Vgs(th)): 2.4V @ 1mA
Drive Voltage: 10V
Product Advantages
Wide operating temperature range
Low on-resistance
High voltage capability
High current handling
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.5Ω
Continuous Drain Current (Id): 480mA
Input Capacitance (Ciss): 125pF
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Device (SMD)
TO-243AA (SOT-89) Package
Application Areas
Power management
Switch mode power supplies
Motor control
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose This Product
Wide operating temperature range
Low on-resistance for efficient power handling
High voltage and current capabilities
Suitable for various power electronics applications
TP2502N8SUPERTEX
TP2435N8-GMicrel / Microchip TechnologyMOSFET P-CH 350V 0.231A SOT89-3