Manufacturer Part Number
TP2435N8-G
Manufacturer
Microchip Technology
Introduction
P-Channel 350V 231mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89) MOSFET Transistor
Product Features and Performance
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 350V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 15 Ohm @ 500mA, 10V
Current Continuous Drain (Id) @ 25°C: 231mA (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Product Advantages
High voltage (350V) P-Channel MOSFET
Low On-Resistance (Rds(on))
Surface Mount (TO-243AA/SOT-89) package
Key Technical Parameters
MOSFET technology
P-Channel FET Type
350V Drain to Source Voltage
231mA Continuous Drain Current
15 Ohm On-Resistance
6W Power Dissipation
Quality and Safety Features
Lead free / RoHS Compliant
Compatibility
General purpose P-Channel MOSFET applications
Application Areas
Power management
Motor control
Switching circuits
General purpose P-Channel MOSFET applications
Product Lifecycle
Available
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
High voltage (350V) capability
Low on-resistance for efficient operation
Surface mount packaging for compact designs
Compliance with RoHS environmental regulations
TP2504N8SUPER