Manufacturer Part Number
TN0106N3-G
Manufacturer
Microchip Technology
Introduction
This is a N-Channel MOSFET transistor from Microchip Technology. It is designed for a variety of power control and switching applications.
Product Features and Performance
N-Channel MOSFET structure
Drain-to-Source voltage up to 60V
Gate-to-Source voltage up to ±20V
On-state resistance (Rds(on)) as low as 3Ω @ 500mA, 10V
Continuous drain current up to 350mA at 25°C
Input capacitance (Ciss) of 60pF @ 25V
Power dissipation up to 1W at Tc
Product Advantages
Efficient power control and switching
High voltage handling capability
Low on-state resistance for low power losses
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 3Ω @ 500mA, 10V
Continuous Drain Current (Id): 350mA @ 25°C
Input Capacitance (Ciss): 60pF @ 25V
Power Dissipation (Pd): 1W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for various industrial and consumer applications
Compatibility
Through-hole mounting (TO-92-3 package)
Application Areas
Power control and switching circuits
Motor drives
Amplifier circuits
Lighting control
General purpose power electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgraded models may become available in the future.
Key Reasons to Choose This Product
Reliable and efficient power control performance
Wide voltage and current handling capabilities
Low on-state resistance for minimal power losses
Compact through-hole package for easy integration
Suitable for a wide range of industrial and consumer applications
Backed by Microchip Technology's quality and reliability