Manufacturer Part Number
TN0201K-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
This product is a single N-Channel TrenchFET MOSFET transistor.
Product Features and Performance
High voltage capability of 20V drain-to-source voltage
Low on-resistance of 1 ohm at 300mA, 10V
Continuous drain current of 420mA at 25°C
Power dissipation of 350mW at 25°C
Fast switching with low gate charge of 1.5 nC at 10V
Product Advantages
Compact SOT-23-3 (TO-236) surface mount package
Wide operating temperature range of -55°C to 150°C
RoHS3 compliant
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1 ohm @ 300mA, 10V
Threshold Voltage (Vgs(th)): 3V @ 250uA
Drive Voltage: 4.5V (max Rds(on)), 10V (min Rds(on))
Gate Charge (Qg): 1.5 nC @ 10V
Quality and Safety Features
RoHS3 compliant
Robust TrenchFET technology
Compatibility
This MOSFET can be used in a variety of low-power, high-voltage switch mode power supply, motor control, and other similar applications.
Application Areas
Switch mode power supplies
Motor control circuits
General-purpose switching
Product Lifecycle
This product is currently in active production and availability. There are no plans for discontinuation at this time.
Key Reasons to Choose This Product
Excellent voltage and current handling capabilities
Extremely low on-resistance for high efficiency
Compact surface mount packaging
Wide temperature range for versatile use
Robust and reliable TrenchFET technology
RoHS3 compliance for environmental responsibility
TN0200T-T1-E3VBSEMI