TC8020K6-G - Microchip Technology

Manufacturer Part Number

TC8020K6-G

Manufacturer

Microchip Technology

Introduction

High voltage 6N6P MOSFET array in a 56-QFN (8x8) package

Product Features and Performance

6 N-channel and 6 P-channel MOSFETs in a single package

200V drain-to-source voltage rating

8Ω maximum on-resistance at 1A, 10V

50pF maximum input capacitance at 25V

4V maximum gate-to-source threshold voltage at 1mA

Product Advantages

Compact 56-QFN (8x8) package

Suitable for high voltage applications

Low on-resistance for efficient power switching

High input impedance for easy gate driving

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 200V

On-Resistance (Rds(on)): 8Ω @ 1A, 10V

Input Capacitance (Ciss): 50pF @ 25V

Gate-to-Source Threshold Voltage (Vgs(th)): 2.4V @ 1mA

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS 3 compliant

Suitable for high temperature applications

Compatibility

Surface mount device

Application Areas

High voltage switching

Motor control

Power management

Industrial automation

Product Lifecycle

Current product, no discontinuation or replacement plans known

Key Reasons to Choose This Product

High voltage rating for challenging applications

Low on-resistance for efficient power switching

Compact 56-QFN package for space-constrained designs

Wide operating temperature range for industrial use

Reliable RoHS 3 compliant construction