Manufacturer Part Number
TC8220K6-G
Manufacturer
Microchip Technology
Introduction
This product is a discrete semiconductor device that belongs to the transistors - FETs, MOSFETs - Arrays category.
Product Features and Performance
2 N-channel and 2 P-channel MOSFET configuration
200V drain-to-source voltage (Vdss)
6Ω maximum on-resistance (Rds(on)) at 1A and 10V gate-to-source voltage
56pF maximum input capacitance (Ciss) at 25V drain-to-source voltage
4V maximum gate-to-source threshold voltage (Vgs(th)) at 1mA drain current
Product Advantages
Excellent power handling and efficiency
High voltage and temperature operation
Compact 12-DFN (4x4) surface mount package
Key Technical Parameters
MOSFET technology
-55°C to 150°C operating temperature range
ROHS3 compliant
Quality and Safety Features
Robust design for reliable operation
Complies with RoHS3 environmental regulations
Compatibility
Suitable for a wide range of applications requiring high voltage, high power MOSFET arrays
Application Areas
Power management circuits
Switching and control applications
Automotive and industrial electronics
Product Lifecycle
This product is currently in production and widely available
No information on upcoming discontinuation or replacements
Key Reasons to Choose This Product
High voltage and power handling capabilities
Compact and efficient surface mount package
Proven MOSFET technology for reliable performance
Wide operating temperature range suitable for demanding applications