TC8220K6-G - Microchip Technology

Manufacturer Part Number

TC8220K6-G

Manufacturer

Microchip Technology

Introduction

This product is a discrete semiconductor device that belongs to the transistors - FETs, MOSFETs - Arrays category.

Product Features and Performance

2 N-channel and 2 P-channel MOSFET configuration

200V drain-to-source voltage (Vdss)

6Ω maximum on-resistance (Rds(on)) at 1A and 10V gate-to-source voltage

56pF maximum input capacitance (Ciss) at 25V drain-to-source voltage

4V maximum gate-to-source threshold voltage (Vgs(th)) at 1mA drain current

Product Advantages

Excellent power handling and efficiency

High voltage and temperature operation

Compact 12-DFN (4x4) surface mount package

Key Technical Parameters

MOSFET technology

-55°C to 150°C operating temperature range

ROHS3 compliant

Quality and Safety Features

Robust design for reliable operation

Complies with RoHS3 environmental regulations

Compatibility

Suitable for a wide range of applications requiring high voltage, high power MOSFET arrays

Application Areas

Power management circuits

Switching and control applications

Automotive and industrial electronics

Product Lifecycle

This product is currently in production and widely available

No information on upcoming discontinuation or replacements

Key Reasons to Choose This Product

High voltage and power handling capabilities

Compact and efficient surface mount package

Proven MOSFET technology for reliable performance

Wide operating temperature range suitable for demanding applications