MCP14E5-E/SN - Microchip Technology

Manufacturer Part Number

MCP14E5-E/SN

Manufacturer

Microchip Technology

Introduction

Power Management Integrated Circuit

Product Features and Performance

Low-Side Gate Driver Configuration

Independent Channel Operation

Dual Driver Functionality

Optimized for IGBT, N-Channel, P-Channel MOSFET Switching

Wide Supply Voltage Range from 4.5V to 18V

Logic Level Compatibility: VIL 0.8V, VIH 2.4V

High Current Peak Output Source and Sink of 4A

Selectable Inverting or Non-Inverting Input

Fast Rise Time of 15ns and Fall Time of 18ns

High Operating Temperature Range from -40°C to 150°C

Product Advantages

Improved Power Efficiency

Robust Thermal Performance

Reduced Switching Losses

High Drive Current for Rapid Switching

Logic Level Inputs for Easy Microcontroller Interface

Precision Timing Characteristics for Synchronous Operations

Key Technical Parameters

Number of Drivers: 2

Voltage - Supply: 4.5V ~ 18V

Current - Peak Output: 4A Source, 4A Sink

Rise / Fall Time: 15ns / 18ns

Operating Temperature Range: -40°C ~ 150°C

Quality and Safety Features

Built-In Protection against Under-voltage Lockout (UVLO)

Robust Against Electrical Over-stress

Extended Temperature Operation for Harsh Environments

Compatibility

Support for Multiple Gate Types: IGBT, N-Channel, P-Channel MOSFETs

Accommodates a Wide Voltage Range for Diverse Applications

Application Areas

Switching Power Supplies

Motor Control

Power Inverters and Converters

Lighting Systems

Automotive and Industrial Controls

Product Lifecycle

Currently Active

Not Nearing Discontinuation

Potential Future Replacements or Upgrades not Announced

Several Key Reasons to Choose This Product

Facilitates Fast and Efficient Switching in Power Circuitry

Provides a High Degree of Flexibility through Dual Independent Channels

Ensures Reliable Operation in Extreme Temperature Conditions

Ideal for High-frequency and High-power Density Applications

Ease of Use with Logic Compatible Input Levels

Stable and Consistent Performance over a Wide Voltage Range