MCP14E10-E/SN - Microchip Technology

Manufacturer Part Number

MCP14E10-E/SN

Manufacturer

Microchip Technology

Introduction

High-Efficiency MOSFET/IGBT Gate Driver with Integrated Bootstrap Diode

Product Features and Performance

Dual independent gate driver channels

Capable of driving N-channel and P-channel MOSFETs, as well as IGBTs

5V to 18V Supply Voltage Range

3A Peak Source/Sink Current Capability

25ns Typical Rise/Fall Times

Integrated Bootstrap Diode

Undervoltage Lockout (UVLO)

Thermal Shutdown Protection

Supports High-Frequency Switching

Product Advantages

Efficient MOSFET/IGBT Switching

Compact 8-SOIC Package

Integrated Protection Features

Wide Operating Temperature Range (-40°C to 150°C)

Suitable for Industrial, Automotive, and Power Conversion Applications

Key Technical Parameters

Voltage Supply: 4.5V to 18V

Number of Drivers: 2 Independent Channels

Logic Voltage VIL, VIH: 0.8V, 2.4V

Current Peak Output (Source, Sink): 3A, 3A

Rise/Fall Time (Typical): 25ns, 25ns

Quality and Safety Features

RoHS3 Compliant

Thermal Shutdown Protection

Undervoltage Lockout (UVLO)

Compatibility

Suitable for driving N-channel and P-channel MOSFETs, as well as IGBTs

Application Areas

Industrial Power Conversion

Automotive Electronics

Motor Control

Switching Power Supplies

Uninterruptible Power Supplies (UPS)

Product Lifecycle

Current product offering

Replacements and upgrades available from Microchip Technology

Several Key Reasons to Choose This Product

Efficient MOSFET/IGBT switching performance

Integrated protection features for reliability

Wide operating temperature range for industrial/automotive use

Compact 8-SOIC package for space-constrained designs

Suitable for a variety of power conversion and motor control applications