Manufacturer Part Number
JANTXV2N2907A
Manufacturer
Microchip Technology
Introduction
Military-grade PNP bipolar junction transistor (BJT)
Designed for high-reliability applications
Product Features and Performance
Capable of operating in extreme temperatures (-65°C to 200°C)
High power handling capacity (500 mW)
High collector-emitter breakdown voltage (60 V)
High collector current (600 mA)
Low collector cutoff current (50 nA)
Low collector-emitter saturation voltage (1.6 V @ 50 mA, 500 mA)
High DC current gain (100 @ 150 mA, 10 V)
Product Advantages
Rugged metal can package (TO-18) for enhanced durability
Designed to meet military-grade MIL-PRF-19500/291 specification
Suitable for use in harsh environments and critical applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 60 V
Collector Current (Max): 600 mA
Collector Cutoff Current (Max): 50 nA
Collector-Emitter Saturation Voltage: 1.6 V @ 50 mA, 500 mA
DC Current Gain (hFE): 100 @ 150 mA, 10 V
Quality and Safety Features
Qualified to MIL-PRF-19500/291 military specification
RoHS non-compliant
Compatibility
Through-hole mounting (TO-18 package)
Suitable for use in military, aerospace, and other high-reliability applications
Application Areas
Military and aerospace electronics
Industrial control systems
Telecommunications equipment
Medical devices
Test and measurement instruments
Product Lifecycle
This is a mature product and is not nearing discontinuation
Replacement or upgrade options may be available from Microchip Technology
Key Reasons to Choose This Product
Extreme temperature operation (-65°C to 200°C)
High power handling and voltage/current capabilities
Rugged metal can package for enhanced durability
Designed to meet military-grade MIL-PRF-19500/291 specification
Suitable for use in harsh and critical applications
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