JANTXV2N2907A - onsemi

Manufacturer Part Number

JANTXV2N2907A

Manufacturer

onsemi

Introduction

The JANTXV2N2907A is a high-reliability military-grade PNP bipolar junction transistor (BJT) designed for use in demanding applications.

Product Features and Performance

Wide operating temperature range of -65°C to 200°C

High power handling capability of 500 mW

Breakdown voltage of up to 60 V

Maximum collector current of 600 mA

Low collector-emitter saturation voltage of 1.6 V

Minimum DC current gain of 100 at 150 mA, 10 V

Product Advantages

Qualified to stringent military specifications

Excellent thermal stability and reliability

Suitable for use in high-stress environments

Consistent performance over wide temperature range

Key Technical Parameters

Package: TO-18 metal can

Transistor Type: PNP

Collector-Emitter Breakdown Voltage (max): 60 V

Collector Current (max): 600 mA

Collector Cutoff Current (max): 50 nA

Collector-Emitter Saturation Voltage (max): 1.6 V

Quality and Safety Features

Meets military-grade JANTXV qualification

Robust metal can package for enhanced durability

Stringent quality control and testing procedures

Compatibility

Suitable as a direct replacement for the 2N2907 transistor

Compatible with various military and industrial applications

Application Areas

Military and aerospace electronics

Industrial control systems

High-reliability power supplies

Amplifier and switching circuits

Product Lifecycle

This product is an established and widely-used military-grade transistor

Replacements and upgrades are readily available from onsemi

Several Key Reasons to Choose This Product

Proven high-reliability performance in demanding applications

Wide operating temperature range and power handling capability

Consistent electrical characteristics over the product's lifetime

Compatibility with various military and industrial standards

Availability of replacements and continued product support from the manufacturer