JANTX2N3700UB - Microchip Technology

Manufacturer Part Number

JANTX2N3700UB

Manufacturer

Microchip Technology

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

Wide operating temperature range: -65°C to 200°C

High power rating: 500 mW

High collector-emitter breakdown voltage: 80 V

High collector current: 1 A

Low collector cutoff current: 10 nA

Low collector-emitter saturation voltage: 500 mV @ 50 mA, 500 mA

High DC current gain: 50 min. @ 500 mA, 10 V

Product Advantages

Designed for military and high-reliability applications

Excellent thermal and electrical performance

Compact surface mount package

Key Technical Parameters

Transistor Type: NPN

Package: 3-SMD, No Lead

RoHS Status: Non-compliant

Quality and Safety Features

Meets MIL-PRF-19500/391 military specification

Reliable performance in extreme environments

Compatibility

Surface mount technology

Suitable for a variety of military and industrial applications

Application Areas

Military and aerospace electronics

Industrial control and automation

High-reliability power electronics

Product Lifecycle

This product is an established military-grade transistor

Replacement or upgrade options may be available from the manufacturer

Key Reasons to Choose This Product

Exceptional performance and reliability for demanding applications

Wide operating temperature range and high power handling

Compliance with military-grade specifications

Compact and efficient surface mount package