JANTX2N3637UB - Microchip Technology

Manufacturer Part Number

JANTX2N3637UB

Manufacturer

Microchip Technology

Introduction

High-reliability PNP bipolar junction transistor (BJT)

Designed for military and aerospace applications

Product Features and Performance

Wide operating temperature range of -65°C to 200°C

High collector-emitter breakdown voltage of 175 V

High collector current rating of 1 A

High collector cutoff current of 10 A

Low collector-emitter saturation voltage of 600 mV

Minimum DC current gain of 100 at 50 mA, 10 V

Product Advantages

Excellent thermal and electrical stability

Rugged construction for harsh environments

Reliable performance in mission-critical applications

Key Technical Parameters

Power dissipation: 1.5 W

Collector-emitter breakdown voltage: 175 V

Collector current: 1 A

Collector cutoff current: 10 A

Collector-emitter saturation voltage: 600 mV

DC current gain: Minimum 100 at 50 mA, 10 V

Quality and Safety Features

Complies with MIL-PRF-19500/357 military specification

RoHS non-compliant

Compatibility

Suitable for surface mount applications

Application Areas

Military and aerospace electronics

Industrial control systems

High-reliability power electronics

Product Lifecycle

This is an established military-grade product

Replacements and upgrades may be available from Microchip Technology

Several Key Reasons to Choose This Product

Exceptional reliability and performance in harsh environments

Proven track record in mission-critical applications

Wide operating temperature range and high voltage/current ratings

Compliance with military-grade specifications