Manufacturer Part Number
APTGF150H120G
Manufacturer
Microchip Technology
Introduction
High-performance non-punch-through (NPT) IGBT module for power electronics applications
Product Features and Performance
High power density with 961 W power rating
Non-punch-through (NPT) IGBT technology
Standard input configuration
Full bridge inverter configuration
2 nF input capacitance at 25 V
1200 V collector-emitter breakdown voltage
200 A maximum collector current
7 V maximum collector-emitter saturation voltage at 15 V gate-emitter voltage and 150 A collector current
350 A maximum collector cutoff current
Chassis mount package
Product Advantages
High power density
Robust NPT IGBT technology
Standard input and full bridge configuration
Low input capacitance
High voltage and current ratings
Key Technical Parameters
Power Rating: 961 W
IGBT Type: Non-punch-through (NPT)
Input Configuration: Standard
Inverter Configuration: Full Bridge
Input Capacitance (Cies): 10.2 nF @ 25 V
Collector-Emitter Breakdown Voltage: 1200 V
Collector Current (Max): 200 A
Collector-Emitter Saturation Voltage: 3.7 V @ 15 V, 150 A
Collector Cutoff Current (Max): 350 A
Quality and Safety Features
Reliable NPT IGBT technology
Chassis mount package for secure installation
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Inverters
Motor drives
Power conversion systems
Renewable energy systems
Product Lifecycle
Currently available, no indication of discontinuation
Replacements and upgrades may be available from Microchip Technology
Several Key Reasons to Choose This Product
High power density for compact designs
Robust NPT IGBT technology for reliable performance
Wide range of technical parameters to suit various application needs
Chassis mount package for secure installation
Compatibility with a variety of power electronics applications
