APTGF150A120TG - Microchip Technology

Manufacturer Part Number

APTGF150A120TG

Manufacturer

Microchip Technology

Introduction

This product is a discrete semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor) module.

Product Features and Performance

NPT (Non-Punch-Through) IGBT type

Standard input

Half-bridge configuration

Input capacitance (Cies) of 10.2 nF at 25 V

Collector-emitter breakdown voltage (Vceo) of 1200 V

Integrated NTC (Negative Temperature Coefficient) thermistor

Collector current (Ic) rating of 200 A

Collector-emitter saturation voltage (Vce(on)) of 3.7 V at 15 V gate-emitter voltage and 150 A collector current

Collector current cutoff (Ic,cut-off) of 350 A

Product Advantages

High power density

Robust design

Integrated NTC thermistor for temperature monitoring

Key Technical Parameters

Power rating: 961 W

IGBT type: NPT

Input: Standard

Configuration: Half Bridge

Input capacitance (Cies): 10.2 nF @ 25 V

Collector-emitter breakdown voltage (Vceo): 1200 V

NTC thermistor: Yes

Collector current (Ic): 200 A

Collector-emitter saturation voltage (Vce(on)): 3.7 V @ 15 V, 150 A

Collector current cutoff (Ic,cut-off): 350 A

Quality and Safety Features

Robust design for reliable performance

Integrated NTC thermistor for temperature monitoring and protection

Compatibility

This IGBT module is designed for use in a variety of power electronics applications.

Application Areas

Suitable for use in power conversion, motor drives, and other high-power electronic systems.

Product Lifecycle

This IGBT module is an active product and is not nearing discontinuation.

Replacements and upgrades may be available from the manufacturer.

Several Key Reasons to Choose This Product

High power density and robust design for reliable performance

Integrated NTC thermistor for temperature monitoring and protection

Suitable for a wide range of power electronics applications

Availability of replacements and potential upgrades from the manufacturer