Manufacturer Part Number
APT75GT120JU2
Manufacturer
Microchip Technology
Introduction
High-performance Insulated Gate Bipolar Transistor (IGBT) module
Product Features and Performance
Trench Field Stop IGBT technology
1200V collector-emitter voltage rating
100A collector current rating
Low conduction losses
Fast switching speed
High power density
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion and control
Compact and rugged design
Reliable performance in demanding applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 100A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Chassis mount package (SOT-227)
Application Areas
Industrial motor drives
Power conversion and control systems
Renewable energy systems
Traction and transportation applications
Product Lifecycle
Current model, no discontinuation planned
Replacements and upgrades available as needed
Key Reasons to Choose This Product
High power density and efficiency
Robust and reliable performance
Wide operating temperature range
Compatibility with various industrial applications
Ongoing support and availability from Microchip Technology