APT75GT120JRDQ3 - Microchip Technology

Manufacturer Part Number

APT75GT120JRDQ3

Manufacturer

Microchip Technology

Introduction

This product is a high-performance Insulated Gate Bipolar Transistor (IGBT) module from Microchip Technology's Thunderbolt IGBT series.

Product Features and Performance

Designed for high-power applications

Optimized for high-efficiency and fast switching

Capable of handling up to 480W of power

Operates in the temperature range of -55°C to 150°C

Product Advantages

Reliable and durable construction

Efficient power handling capabilities

Suitable for a wide range of high-power applications

Key Technical Parameters

IGBT Type: Non-Punch-Through (NPT)

Input: Standard

Configuration: Single

Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V

Voltage Collector Emitter Breakdown (Max): 1200 V

Current Collector (Ic) (Max): 97 A

Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A

Current Collector Cutoff (Max): 200 A

Quality and Safety Features

RoHS3 compliant

Meets industry safety standards

Compatibility

Suitable for use in a variety of high-power applications

Application Areas

Industrial control systems

Power conversion and motor control

Renewable energy systems

Welding equipment

Product Lifecycle

This product is currently in active production

Replacement or upgraded models may become available in the future

Several Key Reasons to Choose This Product

Proven reliability and durability

Efficient power handling capabilities

Wide operating temperature range

Suitable for a variety of high-power applications

Compliance with industry safety standards