APT60GF60JU3 - Microchip Technology

Manufacturer Part Number

APT60GF60JU3

Manufacturer

Microchip Technology

Introduction

High-power discrete insulated-gate bipolar transistor (IGBT) module for industrial applications.

Product Features and Performance

Power rating up to 378W

Non-punch-through (NPT) IGBT technology

Standard input configuration

Single-chip design

Input capacitance of 3.59nF at 25V

Collector-emitter breakdown voltage of 600V

Maximum collector current of 93A

Maximum collector-emitter saturation voltage of 2.5V at 15V gate-emitter voltage and 60A collector current

Product Advantages

High power density

Robust and reliable performance

Optimized thermal characteristics

Compact and easy to integrate

Key Technical Parameters

IGBT Type: NPT

Input: Standard

Configuration: Single

Input Capacitance (Cies) @ Vce: 3.59nF @ 25V

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 93A

Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A

Current Collector Cutoff (Max): 80A

Quality and Safety Features

Robust design for industrial applications

Compliance with relevant safety standards

Compatibility

Compatible with various industrial control and power conversion systems

Application Areas

Industrial motor drives

Power inverters

Uninterruptible power supplies (UPS)

Welding equipment

Other high-power industrial applications

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

High power density and efficient performance

Robust and reliable design for industrial environments

Optimized thermal characteristics for improved reliability

Compact size and easy integration

Compatibility with various industrial applications