Manufacturer Part Number
APT60GF120JRD
Manufacturer
Microchip Technology
Introduction
Discrete Semiconductor Product
Transistors IGBTs Modules
Product Features and Performance
NPT IGBT Type
Standard Input
Single Configuration
Input Capacitance (Cies) @ Vce: 7.08 nF @ 25 V
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 115 A
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 60A
Current Collector Cutoff (Max): 500 mA
Power Max: 521 W
Operating Temperature: -55°C ~ 150°C (TJ)
Product Advantages
Reliable performance
High power handling capability
Wide operating temperature range
Key Technical Parameters
IGBT Type: NPT
Input: Standard
Configuration: Single
Input Capacitance (Cies): 7.08 nF @ 25 V
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 115 A
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 60A
Current Collector Cutoff (Max): 500 mA
Power Max: 521 W
Operating Temperature: -55°C ~ 150°C (TJ)
Quality and Safety Features
Meets industry standards
Robust design for reliable operation
Compatibility
Suitable for a wide range of applications
Application Areas
Power electronics
Industrial automation
Motor control
Renewable energy systems
Product Lifecycle
Current product
Replacement and upgrade options available
Key Reasons to Choose This Product
Reliable performance
High power handling capability
Wide operating temperature range
Robust design for reliable operation
Compatibility with a wide range of applications
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