Manufacturer Part Number
APT1001RBVRG
Manufacturer
Microchip Technology
Introduction
High-voltage, high-power N-channel MOSFET transistor
Product Features and Performance
Drain to Source Voltage (Vdss) of 1000V
On-Resistance (Rds(on)) of 1Ω at 500mA, 10V
Continuous Drain Current (Id) of 11A at 25°C
Input Capacitance (Ciss) of 3660pF at 25V
Threshold Voltage (Vgs(th)) of 4V at 1mA
Gate Charge (Qg) of 225nC at 10V
Product Advantages
High voltage and power handling capabilities
Low on-resistance for efficient power conversion
Suitable for high-power switching applications
Key Technical Parameters
N-Channel MOSFET technology
TO-247 through-hole package
Quality and Safety Features
RoHS3 compliant
Compatibility
Compatible with a wide range of high-power, high-voltage applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
This product is currently in production and available for purchase
Replacements or upgrades may be available in the future as technology advances
Key Reasons to Choose This Product
Excellent voltage and power handling capabilities
Low on-resistance for efficient power conversion
Suitable for a wide range of high-power, high-voltage applications
Reliable and RoHS3 compliant