Manufacturer Part Number
APT1001RBN
Manufacturer
Microchip Technology
Introduction
The APT1001RBN is a high-power, N-channel MOSFET transistor in a TO-247-3 package. It is part of Microchip's POWER MOS IV series and is designed for a variety of power conversion and switching applications.
Product Features and Performance
High drain-source voltage rating of 1000V
Low on-resistance of 1Ω at 5.5A, 10V
Capable of continuous drain current of 11A at 25°C
Wide operating temperature range of -55°C to 150°C
Input capacitance of 2950pF at 25V
Maximum power dissipation of 310W at 25°C
Product Advantages
Robust and reliable design for high-power applications
Efficient power handling capabilities
Suitable for various power conversion and switching needs
Key Technical Parameters
Drain-Source Voltage (Vdss): 1000V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1Ω @ 5.5A, 10V
Continuous Drain Current (Id): 11A @ 25°C
Power Dissipation (Pd): 310W @ 25°C
Quality and Safety Features
Tested and qualified to meet industry standards for reliability and safety
Robust TO-247-3 package provides thermal and mechanical stability
Compatibility
Compatible with a wide range of power electronics and power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial power electronics
Telecommunications equipment
Welding equipment
Induction heating
Product Lifecycle
The APT1001RBN is an active product with no plans for discontinuation
Replacement or upgrade options may be available from Microchip Technology
Key Reasons to Choose This Product
High-voltage and high-current handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range for diverse applications
Robust and reliable design for long-term performance
Compatibility with a variety of power electronics systems
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