Manufacturer Part Number
UCC27201ADR
Manufacturer
Texas Instruments
Introduction
High-speed power management integrated circuit for driving N-Channel MOSFETs in a half-bridge configuration
Product Features and Performance
Drives two N-Channel MOSFETs in a half-bridge arrangement
Independent channel operation
3A peak output current source and sink
Fast switching with rise and fall times of 8ns and 7ns, respectively
Supports high side voltage up to 120V for bootstrap operations
Product Advantages
Designed for high-frequency operation
High-side and low-side drive support
Robust thermal performance with an operational range from -40°C to 140°C
High-efficiency power conversion
Key Technical Parameters
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 8V to 17V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output: 3A source, 3A sink
Input Type: Non-Inverting
High Side Voltage - Max: 120V (Bootstrap)
Rise/Fall Time: 8ns/7ns typical
Operating Temperature: -40°C to 140°C (TJ)
Quality and Safety Features
Thermal shutdown protection
Under-voltage lockout for both channels
3A current capability for rapid charge and discharge of gate capacitance
Compatibility
Compatible with standard N-Channel MOSFETs
Surface mount device compatible with standard manufacturing processes
Application Areas
Switch mode power supplies
Motor control
Power inverters and converters
Class-D audio amplifiers
Product Lifecycle
Product status: Active
Not nearing discontinuation
Availability of replacements or upgrades not indicated
Several Key Reasons to Choose This Product
Robust thermal performance suitable for demanding applications
High drive current capability for efficient switching
Integrated protection features to enhance system safety
Flexible power supply requirements, facilitating design simplicity
Rapid switching times for high-efficiency applications
Texas Instruments' reputation for high-quality components
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