UCC27200DDAR - Texas Instruments

Manufacturer Part Number

UCC27200DDAR

Manufacturer

Texas Instruments

Introduction

High-frequency driver for N-Channel MOSFETs in half-bridge configurations

Product Features and Performance

High-side driver voltage up to 120V

Dual independent drivers for flexible applications

Integrated bootstrap diode

Fast rise and fall times for efficient switching: 8ns/7ns

Operational in a wide temperature range: -40°C to 140°C

Product Advantages

High current capability: 3A source and sink

Robust 3.90mm PowerSOIC package with PowerPad for thermal performance

Lower gate driver loss with non-inverting inputs

Power Management (PMIC) integration for system simplification

Key Technical Parameters

Driven Configuration: Half-Bridge

Channel Type: Independent

Number of Drivers: 2

Gate Type: N-Channel MOSFET

Voltage - Supply: 8V ~ 17V

Logic Voltage - VIL, VIH: 3V, 8V

High Side Voltage - Max (Bootstrap): 120V

Rise / Fall Time: 8ns/7ns

Operating Temperature: -40°C ~ 140°C

Quality and Safety Features

Extended temperature range for reliable operation

Industry-standard packaging for compliance and safety

Compatibility

Surface Mount compatible with 8-PowerSOIC footprint

Designed for use with N-Channel MOSFETs in power switching applications

Application Areas

DC/DC converters

Motor Drives

Power Supplies

Inverters

Product Lifecycle

Active; not indicated as nearing discontinuation

Support and documentation available

Several Key Reasons to Choose This Product

Reliably drives high voltage and current loads

Efficient power switching enhances system performance

Suitable for demanding environments with wide operating temperature

Ease of integration in a variety of circuits and designs

Texas Instruments' support and reliability