TPS2812DR - Texas Instruments

Manufacturer Part Number

TPS2812DR

Manufacturer

Texas Instruments

Introduction

TPS2812DR is a high-performance, dual-channel synchronous low-side gate driver designed for efficient power management, specifically in driving N-Channel MOSFETs.

Product Features and Performance

Synchronous low-side gate driver configuration

Dual driver channels

Supports N-Channel MOSFET Gate Type

Supply Voltage Range from 4V to 14V

Logical Input Levels: VIL 1V and VIH 4V

Peak Output Current: 2A (Source), 2A (Sink)

Non-Inverting Input Type

Fast Rise and Fall Times: 14ns rise, 15ns fall

Operational at a broad temperature range: -40°C to 125°C

Surface Mount with 8-SOIC Package

Product Advantages

Dual-channel configuration allows control of two separate circuits

High efficiency with fast switching capabilities

Wide operating temperature range ensures performance in extreme conditions

Key Technical Parameters

Number of Drivers: 2

Logic Voltage VIL, VIH: 1V, 4V

Current Peak Output (Source, Sink): 2A, 2A

Rise / Fall Time (Typ): 14ns, 15ns

Operating Temperature: -40°C ~ 125°C

Quality and Safety Features

Built to handle high peak output currents repeatedly

Designed for stable operation across a wide range of temperatures

Compatibility

Compatible with N-Channel MOSFETs

Suitable for various surface mount applications

Application Areas

Motor control circuits

Power supply units

Switching power supplies

DC-DC converters

Product Lifecycle

Currently active product status

Not nearing discontinuation

Availability of direct replacements or upgrades

Several Key Reasons to Choose This Product

Effective solution for driving low-side N-Channel MOSFETs

Integrated dual channels enable simultaneous control

Rugged design suitable for harsh operational environments

Fast switching speeds improve system responsiveness

Enhanced power management for a variety of electronics or mechanical components.