Manufacturer Part Number
TPS2811PWR
Manufacturer
Texas Instruments
Introduction
Integrated circuit (IC) for gate driving applications
Product Features and Performance
Dual N-channel and P-channel MOSFET gate driver
Operational voltage range: 4V to 14V
Rise/fall time: 14ns/15ns
Peak output current: 2A source/2A sink
Supports low-side driven configuration
Wide operating temperature range: -40°C to 125°C
Product Advantages
Efficient gate driving for power MOSFETs
Fast switching speed
Wide voltage range support
Robust thermal performance
Key Technical Parameters
Supply voltage: 4V to 14V
Number of drivers: 2
Logic voltage (VIL/VIH): 1V/4V
Driven configuration: Low-side
Gate type: N-channel, P-channel MOSFET
Rise/fall time (typical): 14ns/15ns
Peak output current: 2A source/2A sink
Quality and Safety Features
RoHS3 compliant
8-TSSOP package for surface mount
Compatibility
Suitable for a wide range of power MOSFET gate driving applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Lighting control
Industrial automation
Product Lifecycle
Active product
Replacements and upgrades available
Key Reasons to Choose This Product
Efficient and fast gate driving
Wide voltage range support
Robust thermal performance
Small form factor 8-TSSOP package
Suitable for a variety of power MOSFET driving applications