Manufacturer Part Number
LMG3410R070RWHT
Manufacturer
Texas Instruments
Introduction
High-efficiency, gallium nitride (GaN) power switch for advanced power conversion
Product Features and Performance
GaN technology for high power density and efficiency
Low on-resistance Rds(on) of 70mOhm for reduced conduction losses
Integrated bootstrap circuit for driving high-side N-channel MOSFETs
Features a 5V regulated output for additional circuitry
High load voltage capability up to 480V
PWM and logic compatible interface
Supports high switching frequencies
Product Advantages
Reduced system size due to small 32-VQFN package
Increased power conversion efficiency with GaN technology
Durable operation in a wide temperature range from -40°C to 125°C
Overcurrent and overtemperature protection for system safety
Under-voltage lockout (UVLO) feature for controlled operation
Key Technical Parameters
Power Management Category: Load Drivers
Single Output: 12A max current capacity
Supply Voltage (Vcc/Vdd): 9.5V to 18V
Rds On: 70mOhm typically
Output Type: N-Channel high side
Mounting Type: Surface Mount
Load Voltage: Up to 480V
Quality and Safety Features
Overcurrent protection
Temperature protection with a range of -40°C to 125°C
UVLO protects against low voltage conditions
Compatibility
Logic and PWM interface compatible
Surface mount design fits standard 32-VQFN footprint
Application Areas
Motor controllers
Power supplies
DC-DC converters
Electronic loads
Automotive and industrial power systems
Product Lifecycle
Product Status: Active
Not identified as nearing discontinuation
Replacements or upgrades may be available
Reasons to Choose This Product
High-efficiency GaN technology reduces power loss
Integrated protection features enhance system reliability
Accommodates high input voltage for diverse applications
Capable of operating within a wide temperature range
Enables high-current handling in a compact package
Multiple applications due to versatile power switch characteristics