Manufacturer Part Number
LM5101AM
Manufacturer
Texas Instruments
Introduction
High voltage gate driver designed for driving MOSFETs and IGBTs in half-bridge configurations.
Product Features and Performance
Integrated high-voltage half-bridge gate driver
Independent channel driving capability
2 drivers for N-Channel MOSFET gates
Supports supply voltages between 9V to 14V
Compatible with logic input thresholds of 2.3V for VIL
Peak output current of 3A for both sourcing and sinking
Non-inverting input type
High side voltage withstand up to 118V (bootstrap)
Typical rise and fall times are 430ns and 260ns respectively
Operates over a temperature range of -40°C to 125°C (TJ)
Product Advantages
High peak output current suitable for driving large MOSFETs
Extended operational temperature range for use in harsh environments
Fast switching time enhances efficiency in power conversion applications
Key Technical Parameters
Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Voltage Supply: 9V ~ 14V
Logic Voltage VIL: 2.3V
Current Peak Output (Source/Sink): 3A, 3A
High Side Voltage Max (Bootstrap): 118 V
Rise / Fall Time (Typ): 430ns, 260ns
Quality and Safety Features
Robust design to sustain high voltage scenarios in half-bridge circuits
Compatibility
Can be used with a wide range of N-Channel MOSFETs and IGBTs
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Application Areas
Switch mode power supplies
DC to DC converters
Motor drives
Class D amplifiers
Power inverters
Product Lifecycle
Discontinued at Digi-Key
Consider upgrades or replacement products for new designs
Several Key Reasons to Choose This Product
Texas Instruments' reputation for quality and reliability
High output current for driving powerful gates
Wide operating temperature range for thermal adaptability
Fast switching capabilities for increased power conversion efficiency
Suitable for various high voltage power management applications
LM5100MNS
LM5101ASD-1Texas Instruments