Manufacturer Part Number
LM5101BMA
Manufacturer
Texas Instruments
Introduction
High voltage gate driver for driving MOSFETs and IGBTs
Product Features and Performance
Independent half-bridge gate driver
Capable of driving N-channel MOSFETs
Peak output current of 2A source and 2A sink
Supports high side bootstrap voltages up to 118V
Fast rise and fall times of 570ns and 430ns respectively
Product Advantages
High current driving capability
Integrated under-voltage lockout (UVLO)
Thermal shutdown for over-temperature protection
Cross-conduction prevention logic
Key Technical Parameters
Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply Range: 9V to 14V
Logic Voltage - VIL, VIH: 2.3V, -
Current - Peak Output: 2A source, 2A sink
High Side Voltage - Max: 118 V
Operating Temperature Range: -40°C to 125°C
Quality and Safety Features
Under-voltage lockout for safe operation
Thermal shutdown protection
Propagation delay time for reliable switching
EMI optimized for noise reduction
Compatibility
Surface mount 8-SOIC package
Compatible with various MOSFET and IGBT technologies
Application Areas
Motor control systems
Power supply configurations
DC-DC converters
Half-bridge power stages
Product Lifecycle
Obsolete product status
May require identifying alternative gate drivers for new designs
Several Key Reasons to Choose This Product
High voltage capability for advanced power systems
Dual independent channels for flexible design options
Integrated protection features enhance system reliability
Ideal for high-frequency switching applications
Suited for harsh industrial environments due to temperature range
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