Manufacturer Part Number
RZM001P02T2L
Manufacturer
LAPIS Technology
Introduction
Discrete Semiconductor Product
P-Channel MOSFET Transistor
Product Features and Performance
Operates at up to 150°C junction temperature
Supports up to 20V drain-to-source voltage
Vgs range of ±10V
On-resistance of 3.8Ω @ 100mA, 4.5V Vgs
100mA continuous drain current at 25°C
Input capacitance of 15pF @ 10V Vds
Maximum power dissipation of 150mW at 25°C
Product Advantages
Compact SOT-723 surface mount package
RoHS3 compliant
Tape and reel packaging for automated assembly
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: P-Channel
Threshold Voltage (Vgs(th)): 1V @ 100μA drain current
Drive Voltage Range: 1.2V (max RdsOn) to 4.5V (min RdsOn)
Quality and Safety Features
RoHS3 compliant for environmental safety
Compatibility
General-purpose MOSFET applications
Application Areas
Low-power analog and digital circuits
Battery-powered devices
Switches and control circuits
Product Lifecycle
Currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Compact surface mount package
Broad operating temperature range up to 150°C
Low on-resistance for efficient power switching
Tape and reel packaging for automated assembly
RoHS3 compliance for environmentally-friendly design