Manufacturer Part Number
RSR020N06TL
Manufacturer
LAPIS Technology
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
60V Drain-Source Voltage
2A Continuous Drain Current
170mΩ On-Resistance
540mW Power Dissipation
180pF Input Capacitance
-55°C to 150°C Operating Temperature
Product Advantages
High Efficiency
Low On-Resistance
Small Package Size
Wide Temperature Range
RoHS3 Compliant
Key Technical Parameters
Vdss: 60V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 170mΩ @ 2A, 10V
Id (Continuous) @ 25°C: 2A
Ciss (Max) @ Vds: 180pF @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Qg (Max) @ Vgs: 4.9nC @ 10V
Quality and Safety Features
RoHS3 Compliant
TSMT3 Package
Tape & Reel Packaging
Compatibility
Surface Mount Mounting
Application Areas
Power Management
Switching Circuits
Motor Control
Industrial Electronics
Product Lifecycle
Current Product
Replacements and Upgrades Available
Key Reasons to Choose
High Efficiency and Low On-Resistance
Small Package Size
Wide Operating Temperature Range
RoHS3 Compliance
Proven Reliability and Performance