Manufacturer Part Number
RRH140P03TB1
Manufacturer
LAPIS Technology
Introduction
High-performance P-channel power MOSFET transistor with low on-resistance and high current capability.
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 30V
Extremely low on-resistance (Rds(on)) of 7mΩ at 14A, 10V
High continuous drain current (Id) of 14A at 25°C
Low input capacitance (Ciss) of 8000pF at 10V
Power dissipation (Pd) of 650mW at 25°C
Operating temperature up to 150°C
Product Advantages
Excellent energy efficiency due to ultra-low on-resistance
High current handling capability
Compact surface mount package
Suitable for high-power, high-frequency switching applications
Key Technical Parameters
Vdss: 30V
Rds(on): 7mΩ @ 14A, 10V
Id: 14A @ 25°C
Ciss: 8000pF @ 10V
Pd: 650mW @ 25°C
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Meets high-reliability quality standards
Compatibility
Suitable for use in a wide range of power electronics applications, including:
Switch-mode power supplies
Motor drives
Industrial automation equipment
Consumer electronics
Application Areas
High-efficiency power conversion
High-current switching
Motor control
Industrial and consumer electronics
Product Lifecycle
This product is an actively supported part of LAPIS Technology's portfolio. Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent energy efficiency due to ultra-low on-resistance
High current handling capability for demanding applications
Compact surface mount package for space-constrained designs
Proven reliability and quality backed by LAPIS Technology
Suitability for a wide range of power electronics applications
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