Manufacturer Part Number
RRH090P03TB1
Manufacturer
LAPIS Technology
Introduction
The RRH090P03TB1 is a P-channel MOSFET transistor from LAPIS Technology.
Product Features and Performance
30V Drain-Source Voltage
4mΩ On-Resistance
9A Continuous Drain Current
3000pF Input Capacitance
650mW Power Dissipation
5V Threshold Voltage
Supports 4V to 10V Drive Voltage Range
30nC Gate Charge
Product Advantages
Low on-resistance for efficient power switching
High current handling capability
Compact surface mount package
Suitable for a variety of power management applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 15.4mΩ
Drain Current (Id): 9A
Input Capacitance (Ciss): 3000pF
Power Dissipation (Pd): 650mW
Quality and Safety Features
RoHS3 compliant
8-SOP package
Compatibility
Surface mount package compatible with standard assembly processes
Application Areas
Power management circuits
Motor control
Switching power supplies
General purpose power switching
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent on-resistance and current handling for efficient power switching
Compact surface mount package for space-constrained designs
Suitable for a wide range of power management and control applications
Compliant with RoHS environmental regulations
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