DTC114EKAT146 - Rohm Semiconductor

Manufacturer Part Number

DTC114EKAT146

Manufacturer

LAPIS Technology

Introduction

This is a pre-biased NPN bipolar junction transistor (BJT) in a surface-mount TO-236-3, SC-59, or SOT-23-3 package.

Product Features and Performance

Power rating of 200 mW

Collector-emitter breakdown voltage up to 50 V

Collector current up to 50 mA

Collector cutoff current limited to 500 nA

Low collector-emitter saturation voltage of 300 mV at 10 mA

DC current gain (hFE) of at least 30 at 5 mA, 5 V

Transition frequency of 250 MHz

Internal base and emitter resistors of 10 kΩ each

Product Advantages

Pre-biased for simplified circuit design

Small surface-mount package options

Suitable for high-frequency applications

Key Technical Parameters

Power rating: 200 mW

Collector-emitter breakdown voltage: 50 V

Collector current: 50 mA

Collector cutoff current: 500 nA

Collector-emitter saturation voltage: 300 mV

DC current gain (hFE): 30 (min)

Transition frequency: 250 MHz

Base and emitter resistor values: 10 kΩ each

Quality and Safety Features

RoHS3 compliant

Suitable for SMT (surface-mount technology) assembly

Compatibility

Can be used in a variety of electronic circuits and applications where a pre-biased NPN BJT is required.

Application Areas

Amplifiers

Switches

Logic gates

Electronic control circuits

Radio frequency (RF) circuits

Product Lifecycle

This product is currently in production and available. No information on discontinuation or replacement models.

Key Reasons to Choose This Product

Pre-biased for simplified circuit design

Small surface-mount package options

Suitable for high-frequency applications

Favorable electrical characteristics, including high breakdown voltage, low saturation voltage, and high transition frequency

RoHS3 compliance for environmental sustainability