Manufacturer Part Number
DTC114EM3T5G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors - Bipolar (BJT) - Single, Pre-Biased
Product Features and Performance
Power Max: 260 mW
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
Transistor Type: NPN Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor Base (R1): 10 kOhms
Resistor Emitter Base (R2): 10 kOhms
Product Advantages
Compact surface mount package
Pre-biased for easy implementation
Robust performance specifications
Key Technical Parameters
RoHS: ROHS3 Compliant
Manufacturer's packaging: SOT-723
Package / Case: SOT-723
Supplier Device Package: SOT-723
Package: Tape & Reel (TR)
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 compliant
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Suitable for use in various electronic circuits and applications
Product Lifecycle
Current production status, no discontinuation information provided
Key Reasons to Choose This Product
Compact surface mount package for space-constrained designs
Pre-biased configuration for easy implementation
Robust performance specifications to meet design requirements
RoHS3 compliance for environmental responsibility
Compatibility with a wide range of electronic circuits and applications
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