Manufacturer Part Number
DTA114EKAT146
Manufacturer
LAPIS Technology
Introduction
The DTA114EKAT146 is a pre-biased PNP bipolar junction transistor (BJT) in a small SMT3 package.
Product Features and Performance
High-frequency operation up to 250 MHz
Low collector-emitter saturation voltage of 300 mV
High DC current gain of 30 or more
Low collector cutoff current of 500 nA
Integrated base and emitter resistors of 10 kOhms each
Power rating of 200 mW
Product Advantages
Compact SMT3 package for space-efficient designs
Pre-biased configuration simplifies circuit design
Robust PNP transistor performance
Suitable for high-frequency analog and digital applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 50 mA
Collector Cutoff Current (Max): 500 nA
Collector-Emitter Saturation Voltage: 300 mV
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
Suitable for surface mount applications
Application Areas
Analog and digital circuits
Switching and amplifier circuits
Bias and level-shifting circuits
Product Lifecycle
Currently available
No known plans for discontinuation
Key Reasons to Choose This Product
Compact SMT3 package for space-efficient designs
High-frequency operation up to 250 MHz
Low collector-emitter saturation voltage for efficient performance
Integrated base and emitter resistors for simplified circuit design
Robust PNP transistor characteristics for reliable operation
