Manufacturer Part Number
DTA114EM3T5G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors Bipolar (BJT) Single, Pre-Biased
Product Features and Performance
Power Max: 260 mW
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 500 nA
Vce Saturation (Max) @ Ib, Ic: 250 mV @ 300 A, 10 mA
Transistor Type: PNP Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5 mA, 10 V
Resistor Base (R1): 10 kOhms
Resistor Emitter Base (R2): 10 kOhms
Product Advantages
Pre-biased transistor for simplified circuit design
Compact surface mount package
Suitable for low power applications
Key Technical Parameters
RoHS: ROHS3 Compliant
Manufacturer's packaging: SOT-723
Package / Case: SOT-723
Supplier Device Package: SOT-723
Package: Tape & Reel (TR)
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a variety of low power electronic circuits
Application Areas
Low power electronic circuits
Switching applications
Amplifier circuits
Product Lifecycle
This product is an active part and not nearing discontinuation
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose This Product
Pre-biased for simplified circuit design
Compact surface mount package
Suitable for low power applications
RoHS3 Compliant for environmental compliance
Manufacturer is a reputable semiconductor company (onsemi)
DTA114ELUTC