BS2103F-E2 - Rohm Semiconductor

Manufacturer Part Number

BS2103F-E2

Manufacturer

ROHM Semiconductor

Introduction

The BS2103F-E2 is a half-bridge gate driver IC designed to drive IGBT and N-Channel MOSFET power switches. It features independent driver channels, high-side bootstrap operation, and a wide operating voltage range. This gate driver provides robust and reliable performance for a variety of power conversion applications.

Product Features and Performance

Half-bridge gate driver with independent driver channels

Supports IGBT and N-Channel MOSFET power switches

Wide operating voltage range: 10V to 18V

High-side bootstrap operation up to 600V

Fast rise and fall times: 200ns and 100ns respectively

Wide operating temperature range: -40°C to 150°C

Product Advantages

Reliable and robust performance for power conversion applications

Flexible configuration with independent driver channels

Capable of driving both IGBT and MOSFET power switches

Wide voltage and temperature operating ranges

Key Reasons to Choose This Product

Proven reliability and performance in a wide range of power electronics applications

Flexible driver configuration with independent channels

Able to drive both IGBT and MOSFET power switches

Wide operating voltage and temperature ranges provide design flexibility

Quality and Safety Features

Thorough testing and quality control measures

Compliance with relevant safety standards

Compatibility

The BS2103F-E2 is compatible with a variety of IGBT and N-Channel MOSFET power switches.

Application Areas

Power conversion systems

Motor drives

Inverters

Switch-mode power supplies

Product Lifecycle

The BS2103F-E2 is an obsolete product. Customers should contact our website's sales team for information on equivalent or alternative models that may be available.