BS250FTA - Diodes Incorporated

Manufacturer Part Number

BS250FTA

Manufacturer

Diodes Incorporated

Introduction

The BS250FTA is a P-channel enhancement-mode MOSFET transistor from Diodes Incorporated.

Product Features and Performance

P-channel enhancement-mode MOSFET

Drain-to-Source voltage (Vdss) of 45V

Maximum gate-to-source voltage (Vgs) of ±20V

On-state resistance (Rds(on)) of 14Ω @ 200mA, 10V

Continuous drain current (Id) of 90mA at 25°C

Input capacitance (Ciss) of 25pF @ 10V

Power dissipation of 330mW at 25°C

Product Advantages

Low on-state resistance for efficient power switching

High voltage handling capability

Small surface-mount SOT-23-3 package

Key Technical Parameters

MOSFET technology

P-channel enhancement-mode

45V Drain-to-Source voltage

±20V Gate-to-Source voltage

14Ω on-state resistance @ 200mA, 10V

90mA continuous drain current @ 25°C

25pF input capacitance @ 10V

330mW power dissipation @ 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

Compatible with a wide range of electronic circuits and systems requiring a P-channel MOSFET

Application Areas

Power switching

Amplifier circuits

Battery-powered devices

General-purpose electronic circuits

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Efficient power switching performance with low on-state resistance

High voltage handling capability

Small surface-mount package for compact design

Reliable and RoHS-compliant construction

Compatibility with a wide range of electronic applications