Manufacturer Part Number
TH58NYG3S0HBAI4
Manufacturer
Toshiba Memory America
Introduction
The TH58NYG3S0HBAI4 is a high-performance 8Gbit NAND FLASH memory chip designed for robust data storage and retrieval in a wide range of applications.
Product Features and Performance
Non-Volatile FLASH memory
Utilizes NAND technology for faster read/write operations
FLASH memory organized in a 1G x 8 format
Parallel memory interface allowing quicker data access
Fast Write Cycle Time and Access Time of 25ns
Product Advantages
Sustained performance and reliability
Efficient data handling capabilities
High-density data storage solution
Stable under a broad range of environmental conditions
Key Technical Parameters
Memory Size: 8Gbit
Memory Format: FLASH
Technology: FLASH NAND (SLC)
Access Time: 25 ns
Voltage Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Robust operating temperature range ensuring performance in extreme conditions
Meets rigorous quality standards
Compatibility
Compatible with various applications requiring high-speed data transactions and storage
Surface Mount for seamless integration into various device architectures
Application Areas
Embedded systems
Consumer electronics
Telecommunications equipment
Industrial automation systems
Product Lifecycle
Currently Active status
No indication of discontinuation, ensuring long-term availability
Several Key Reasons to Choose This Product
High storage capacity of 8Gbit suitable for demanding applications
Fast and reliable with a 25 ns access and write cycle time
Durable and designed for use in harsh temperature conditions
Trusted manufacturer known for quality semiconductor products
Versatile application across multiple industries including high-tech and industrial markets.
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