Manufacturer Part Number
TH58NYG2S3HBAI4
Manufacturer
Toshiba Memory America
Introduction
The TH58NYG2S3HBAI4 is a high-performance 4Gbit NAND FLASH memory module designed for advanced digital storage solutions.
Product Features and Performance
Non-Volatile FLASH Memory
Memory Size: 4Gbit
Superior Single-Level Cell (SLC) NAND technology
High-speed Parallel Memory Interface
Fast Write Cycle Time Word, Page: 25ns
Product Advantages
Enhanced durability with SLC technology
Large storage capacity
Quick data transfer and processing capabilities
Key Technical Parameters
Memory Organization: 512M x 8
Voltage Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Robust data retention capabilities
Operational across extreme temperature ranges
Compatibility
Compatible with applications requiring high-performance, reliable data storage
Application Areas
Digital cameras
High-performance computing systems
Advanced mobile devices
Product Lifecycle
Current Product Status: Active
Long-term availability with no immediate discontinuation
Several Key Reasons to Choose This Product
High reliability and durability due to SLC NAND technology
Consistent performance across a wide range of temperatures
Beneficial for applications requiring large, fast, and dependable memory storage.
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