Manufacturer Part Number
TC58NVG0S3HTA00
Manufacturer
Toshiba Memory America
Introduction
Flash memory component for data storage applications
Product Features and Performance
Non-Volatile FLASH memory
SLC NAND technology for higher reliability
1Gbit memory size for substantial data storage
Parallel memory interface for efficient data transfer
Programmable write cycle time for flexibility
Product Advantages
High endurance SLC NAND technology
Suitable for a wide voltage range (2.7V to 3.6V)
Operational across standard temperature range (0°C to 70°C)
Key Technical Parameters
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: NAND (SLC)
Memory Size: 1Gbit
Memory Organization: 128M x 8
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Quality and Safety Features
Trusted manufacturer with a reputation for reliability
High standard of operational temperature range
Compatibility
Surface Mount mounting type fits standard PCB designs
48-TFSOP package compatible with standard equipment
Application Areas
Can be used in a variety of electronic devices and systems
Product Lifecycle
Active product status, not nearing discontinuation
Future replacements or upgrades typically available
Several Key Reasons to Choose This Product
Reliable SLC NAND technology for critical applications
Large memory capacity for storage-intensive tasks
Fast access and write times for high-speed performance
Broad compatibility with differing voltage and temperature requirements
Active lifecycle status ensures ongoing support and availability
Manufactured by a globally recognized leader in memory technology
TC58NVG0S3ETAI0TAEC Product (Toshiba Electronic Devices and Stora
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