Manufacturer Part Number
TC58NVG0S3HBAI4
Manufacturer
Toshiba Memory America
Introduction
1Gbit SLC NAND Flash Memory
Product Features and Performance
Non-Volatile Flash Memory
SLC NAND Technology
High-speed Write Cycle Time - 25ns
Quick Access Time - 25ns
Parallel Memory Interface
1Gbit Memory Size
128M x 8 Memory Organization
Operates Across 2.7V to 3.6V Voltage Range
Wide Operating Temperature Range from -40°C to 85°C
Product Advantages
Reliable SLC NAND Flash Technology
Suitable for High-Performance Applications
Durable in a Wide Range of Environmental Conditions
Key Technical Parameters
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 1Gbit
Memory Organization: 128M x 8
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Quality and Safety Features
Extended Temperature Range Ensures Reliable Operation
Surface Mount Package for Secure Assembly
Compatibility
Industry-standard 63-VFBGA Packaging
Compatible with Standard Parallel Interface Systems
Application Areas
Embedded Systems
Industrial Electronics
Data Storage
Product Lifecycle
Product Status: Active
Not Nearing Discontinuation
Availability of Replacements or Upgrades Likely
Several Key Reasons to Choose This Product
High-Speed Program and Erase Capabilities
Stable SLC NAND Memory Solution
Longevity in Harsh Temperature Environments
Robust Quality and Reliability From Toshiba
Direct Support From Manufacturer Toshiba Memory America
TC58NVG0S3HBAI4JDHTAEC Product (Toshiba Electronic Devices and Stora
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